Job Overview:

In this role, you will be pivotal in developing C-band and X-band Ga N HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.

Key Responsibilities:

Design: Design reticles, masks and process flows for developing 0.25 um Ga N on Si C HEMTs on 4-inch wafers as well as on smaller pieces Fabrication: Drive fabrication of such HEMTs in conjunction with a small-volume Ga N foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules. Intermediate characterization and testing: Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow. Final device deliverable: Own up the device development effort and have final HEMTs fully ch...