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Micron’s Advanced DRAM Device Technology Group is focused on enabling future memory scaling through cutting‑edge research and development. Located in our industry‑leading 300mm R&D facility, the team works on Planar and 3D DRAM technologies, collaborating across material, process, design, modeling, characterization, and product engineering groups.

As a Device Engineer intern you will be responsible for the characterization and data analysis of new memory, analyzing electrical failures, improvement of yield and of overall cell performance. In addition to a broad basis of Device knowledge, you will have a deep understanding of Semiconductor Device Physics including CMOS, bipolar, diodes, etc. You’ll interact significantly with material, process, design, modeling, characterization and product groups, and will provide project sta...