MIT Lincoln Laboratory’s Advanced Technology Division develops advanced materials, devices, and subsystems that have broad impact on U.S. Government, industry, and academia. The Division has made a wide range of important contributions during the Laboratory’s 70+ year history, including development of bulk and epitaxial crystal growth, charge-coupled device (CCD) imagers, 193-nm lithography, fully depleted silicon-on-insulator (FDSOI) CMOS electronics, semiconductor diode lasers and amplifiers, superconducting electronics and quantum bit (qubit) devices, and photonic integrated circuits (PICs). To enable this advanced technology development, the Laboratory has implemented vertically integrated in-house resources to facilitate design, lithographic mask layout, material growth and characterization, fabrication (e.g., silicon, compound-semiconductor, wafer bonding, flip-chip hybrid), packaging, and testing of electronic and photonic circuits. These in-house resources are used to fabricate...